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february 2009 rev 1 1/17 17 std8nm60nd, stf8nm60nd stp8nm60nd, STU8NM60ND n-channel 600 v, 0.59 ? , 7 a, fdmesh? ii power mosfet to-220, to-220fp, ipak, dpak features the worldwide best r ds(on) * area amongst the fast recovery diode devices 100% avalanche tested low input capacitance and gate charge low gate input resistance extremely high dv/dt and avalanche capabilities application switching applications description the fdmesh? ii series belongs to the second generation of mdmesh? technology. this revolutionary power mosfet associates a new vertical structure to the company?s strip layout and associates all advantages of reduced on- resistance and fast switching with an intrinsic fast- recovery body diode.strongly recommended for bridge topologies, in zvs phase-shift converters. figure 1. internal schematic diagram type v dss (@tjmax) r ds(on) max i d std8nm60nd 650 v < 0.70 ? 7 a stf8nm60nd 650 v < 0.70 ? 7 a stp8nm60nd 650 v < 0.70 ? 7 a (1) 1. limited only by maximum temperature allowed STU8NM60ND 650 v < 0.70 ? 7 a to-220 dpak ipak 1 2 3 3 2 1 1 3 1 2 3 to-220fp table 1. device summary order codes marking package packaging std8nm60nd 8nm60nd dpak tape and reel stf8nm60nd 8nm60nd to-220fp tube stp8nm60nd 8nm60nd to-220 tube STU8NM60ND 8nm60nd ipak tube www.st.com
contents stx8nm60nd 2/17 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
stx8nm60nd electrical ratings 3/17 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-220 dpak ipak to-220fp v ds drain-source voltage (v gs = 0) 600 v v gs gate-source voltage 30 v i d drain current (continuous) at t c = 25 c 77 (1) 1. limited only by maximu m temperature allowed a i d drain current (continuous) at t c = 100 c 4.4 4.4 (1) a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 28 28 (1) a p tot total dissipation at t c = 25 c 70 25 w v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s;t c = 25 c) 2500 v dv/dt (3) 3. i sd 7 a, di/dt 400 a/s, v dd = 80% v (br)dss peak diode recovery voltage slope 40 v/ns t stg storage temperature -55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit to-220 dpak ipak to-220fp r thj-case thermal resistance junction-case 1.79 5 c/w r thj-amb thermal resistance junction-amb 62.5 100 62.5 c/w r thj-pcb thermal resistance junction-pcb 50 c/w t l maximum lead temperature for soldering purpose 300 c table 4. avalanche characteristics symbol parameter max value unit i as avalanche current, repetitive or not-repetitive (pulse width limited by tj max) 2.5 a e as single pulse avalanche energy (starting tj = 25 c, i d = i as , v dd = 50 v) 200 mj
electrical characteristics stx8nm60nd 4/17 2 electrical characteristics (t case = 25 c unless otherwise specified) table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 600 v dv/dt (1) 1. characteristics value at turn off on inductive load drain-source voltage slope v dd = 480 v, i d = 7 a, v gs =10 v 45 v/ns i dss zero gate voltage drain current (v gs = 0) v ds = max rating, v ds = max rating,tc = 125 c 1 100 a a i gss gate body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on) static drain-source on resistance v gs = 10v, i d = 3.5 a 0.59 0.70 ? table 6. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration = 300s, duty cycle 1.5% forward transconductance v ds = 15 v, i d = 5 a 7.5 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 560 37 4 pf pf pf c oss eq. (2) 2. c oss eq . is defined as a constant equivalent ca pacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent output capacitance v gs = 0, v ds = 0 to 480 v 90 pf r g gate input resistance f = 1 mhz gate dc bias = 0 test signal level = 20 mv open drain 6 ? q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 480 v, i d = 7 a v gs = 10 v figure 19 22 4 13 nc nc nc
stx8nm60nd electrical characteristics 5/17 table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 300 v, i d = 7 a, r g = 4.7 ?, v gs = 10 v figure 18 , figure 23 9 22 37 22 ns ns ns ns table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) 7 28 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 7 a, v gs = 0 1.3 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 7 a, di/dt = 100 a/s, v dd = 30 v, figure 20 120 0.49 8 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 7 a, di/dt = 100 a/s, v dd = 30 v, tj=150c figure 20 170 0.75 9 ns c a
electrical characteristics stx8nm60nd 6/17 2.1 electrical character istics figure 2. safe operating area for to-220 figure 3. thermal impedance for to-220 figure 4. safe operating area for dpak, ipak figure 5. thermal impedance for dpak, ipak figure 6. safe operating area for to-220fp figure 7. thermal impedance for to-220fp i d 10 1 0.1 0.01 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s inlge p u l s e am0 3 1 8 9v1 i d 10 1 0.1 0.01 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s inlge p u l s e am0 3 1 88 v1 i d 10 1 0.1 0.01 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s inlge p u l s e am0 3 190v1
stx8nm60nd electrical characteristics 7/17 figure 8. output characteristics figure 9. transfer characteristics figure 10. transconductance figure 11. static-drain source on resistance figure 12. gate charge vs gate-source voltage figure 13. capacitance variations i d 6 4 2 0 0 10 v d s (v) 20 (a) 5 15 25 8 10 3 0 12 5v 6v 7v v g s =10v am0 3 191v1 i d 6 4 2 0 0 4 v g s (v) 8 (a) 2 6 10 8 10 12 v d s =15v am0 3 192v1 g f s 6.5 4.5 2.5 0.5 0 5 i d (a) ( s ) 10 8 .5 t j =-50c t j =25c t j =150c am0 3 19 3 v1 r d s (on) 0.054 0.049 0.044 0.0 3 9 0 4 i d (a) ( ? ) 2 6 0.059 0.064 0.069 i d = 3 .5a v g s =10v am0 3 194v1 v g s 6 4 2 0 0 5 q g (nc) (v) 20 8 10 15 10 v dd =4 8 0v i d =7a 25 12 3 00 200 100 0 400 500 v d s v g s am0 3 195v1 c 1000 100 10 1 0.1 10 v d s (v) (pf) 1 100 ci ss co ss cr ss am0 3 196v1
electrical characteristics stx8nm60nd 8/17 figure 14. normalized gate threshold voltage vs temperature figure 15. normalized on resistance vs temperature figure 16. source-drain diode forward characteristics figure 17. normalized bv dss vs temperature v g s (th) 1.00 0.90 0. 8 0 0.70 -50 0 t j (c) (norm) -25 75 25 50 100 am0 3 197v1 r d s (on) 1. 3 1.1 0.9 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 0.7 1.5 1.7 1.9 am0 3 19 8 v1 v s d 0 20 i s d (a) (v) 10 50 3 0 40 0.2 0.4 0.6 0. 8 1.0 1.2 0 t j =-50c t j =25c t j =150c am0 3 199v1 bv d ss -50 0 t j (c) (norm) -25 75 25 50 100 0.9 3 0.95 0.97 0.99 1.01 1.0 3 1.05 1.07 am0 3 1200v1
stx8nm60nd test circuits 9/17 3 test circuits figure 18. switching times test circuit for resistive load figure 19. gate charge test circuit figure 20. test circuit for inductive load switching and diode recovery times figure 21. unclamped inductive load test circuit figure 22. unclamped inductive waveform figure 23. switching time waveform
package mechanical data stx8nm60nd 10/17 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack? packages, depending on their level of environmental compliance. ecopack? specifications, grade definitions and product status are available at: www.st.com. ecopack? is an st trademark.
stx8nm60nd package mechanical data 11/17 to-220 mechanical data dim mm inch min typ max min typ max a 4.40 4.60 0.17 3 0.1 8 1 b 0.61 0. 88 0.024 0.0 3 4 b 1 1.14 1.70 0.044 0.066 c0.4 8 0.70 0.01 9 0.027 d 15.25 15.75 0.6 0.62 d1 1.27 0.050 e 10 10.40 0. 393 0.40 9 e 2.40 2.70 0.0 9 4 0.106 e1 4. 9 5 5.15 0.1 9 4 0.202 f1.2 3 1. 3 2 0.04 8 0.051 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.0 9 4 0.107 l1 3 14 0.511 0.551 l1 3 .50 3 . 93 0.1 3 7 0.154 l20 16.40 0.645 l 3 02 8 . 9 0 1.1 3 7 ? p 3 .75 3 . 8 5 0.147 0.151 q2.65 2. 9 5 0.104 0.116
package mechanical data stx8nm60nd 12/17 dim. mm . x a m . p y t . n i m 6 . 4 4 . 4 a 7 . 2 5 . 2 b 5 7 . 2 5 . 2 d 7 . 0 5 4 . 0 e 1 5 7 . 0 f 0 7 . 1 5 1 . 1 1 f 5 . 1 5 1 . 1 2 f 2 . 5 5 9 . 4 g 7 . 2 4 . 2 1 g 4 . 0 1 0 1 h 6 1 2 l 6 . 0 3 6 . 8 2 3 l 6 . 0 1 8 . 9 4 l 6 . 3 9 . 2 5 l 4 . 6 1 9 . 5 1 6 l 3 . 9 9 7 l 2 . 3 3 a i d 7012510_rev_j a b h di a l7 d e l6 l5 l2 l 3 l4 f1 f2 f g g1 to-220fp mechanical data
stx8nm60nd package mechanical data 13/17 dim. mm. min. typ max. a 2.20 2.40 a1 0. 9 01.10 b 0.64 0. 9 0 b 2 0. 9 5 b 4 5.20 5.40 c 0.45 0.60 c2 0.4 8 0.60 d 6.00 6.20 e 6.40 6.60 e2.2 8 e1 4.40 4.60 h 16.10 l 9 .00 9 .40 (l1) 0. 8 01.20 l2 0. 8 0 v1 10 o to-251 (ipak) mechanical data 006 8 771_h
package mechanical data stx8nm60nd 14/17 dim. mm. min. typ max. a 2.20 2.40 a1 0. 9 01.10 a2 0.0 3 0.2 3 b 0.64 0. 9 0 b 4 5.20 5.40 c 0.45 0.60 c2 0.4 8 0.60 d 6.00 6.20 d1 5.10 e 6.40 6.60 e1 4.70 e2.2 8 e1 4.40 4.60 h 9 . 3 5 10.10 l1 l1 2. 8 0 l2 0. 8 0 l4 0.60 1 r0.20 v2 0 o 8 o to-252 (dpak) mechanical data 006 8 772_g
stx8nm60nd packaging mechanical data 15/17 5 packaging mechanical data tape and reel shipment dpak footprint dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 16.4 18.4 0.645 0.724 n 50 1.968 t 22.4 0.881 base qty bulk qty 2500 2500 reel mechanical data dim. mm inch min. max. min. max. a0 6.8 7 0.267 0.275 b0 10.4 10.6 0.409 0.417 b1 12.1 0.476 d 1.5 1.6 0.059 0.063 d1 1.5 0.059 e 1.65 1.85 0.065 0.073 f 7.4 7.6 0.291 0.299 k0 2.55 2.75 0.100 0.108 p0 3.9 4.1 0.153 0.161 p1 7.9 8.1 0.311 0.319 p2 1.9 2.1 0.075 0.082 r 40 1.574 w 15.7 16.3 0.618 0.641 tape mechanical data all dimensions are in millimeters
revision history stx8nm60nd 16/17 6 revision history table 9. document revision history date revision changes 09-feb-2009 1 first release
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